Newsletter-Autumn 2024
As global efforts toward renewable energy and carbon reduction policies accelerate, new energy technologies are rapidly emerging as dominant forces for the future. As a pioneer in the MELF resistor industry, Firstohm is dedicated to providing stable and reliable solutions for these cutting-edge technologies. Our MELF resistors deliver exceptional performance and durability in applications such as PV inverters, wind energy conversion, electric vehicles, and energy storage systems. In this edition, we introduce our latest technical advancements and explore how these innovations are driving the development of new energy projects, helping you seize market opportunities and embrace the future of green energy.
★ September 11–13, 2024: electronica India
Location: India Expo Centre, Greater Noida, Delhi NCR, India
Booth Number: H10.G61 (Hall 10, Booth G61)
★ November 12–15, 2024: electronica Munich, Germany
Location: Messe München, Germany
Booth Number: A5.411 (Hall A5, Booth 411)
Firstohm is excited to showcase resistor product applications related to the green energy industry. In response to the growing focus on corporate sustainability, we are committed to providing industry-leading, highly reliable resistor products. We warmly welcome all professionals to visit and provide valuable feedback!
★ 2024 Updated Company Profile and Product Catalog Released on June 30
★The Technical Advantages of MELF Resistors in IGBT Gate Resistor Applications
IGBT(Insulated Gate Bipolar Transistor)is a power semiconductor device that combines the high input impedance of MOSFETs with the low conduction voltage of BJTs, making it widely used in power electronics. The gate resistor (Rg) is a crucial component in the IGBT gate drive circuit, primarily controlling the switching speed and reducing switching noise.
The selection of the gate resistor is critical to ensuring the stable operation and long-term reliability of the IGBT. In this application, MELF resistors demonstrate several significant technical advantages:
• Low Parasitic Inductance and Capacitance: MELF resistors have exceptionally low parasitic inductance and capacitance, which are crucial for signal integrity in high-speed switching applications. This low parasitic effect helps reduce signal distortion during switching, thus enhancing overall system performance.
• High Stability and Temperature Resistance: The high stability and temperature resistance of MELF resistors allow them to maintain a consistent resistance value even in high power density and extreme operating environments. This ensures that the IGBT can handle high power and thermal stress, ensuring circuit reliability and longevity.
• Precision Manufacturing and Excellent Temperature Coefficient: These features enable precise control of gate voltage, helping to improve switching efficiency, reduce power loss, and enhance overall system energy efficiency.
In summary, MELF resistors offer an ideal solution for IGBT gate resistor applications, thanks to their low parasitic effects, high-temperature stability, and precise resistance control. Firstohm’s MELF resistor solutions meet the high-performance and reliability demands of today’s power electronics industry, helping you stay ahead in the technical competition.
※Applications:
1. Electric Vehicles
2. Solar Inverters
3. Charging Stations
4. Energy Storage Systems
5. Industrial Power Supplies
※Recommend MELF Resistors:
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What's New At Firstohm-Autumn 2024
The advantage of using MELF resistors for IGBT Gate resistors
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