抗突波膜层晶圆电阻1W 33.2ohm 1%
SRM101TF33R2TKZTR2K0
高脉冲负载,抗浪涌,抗硫化
抗突波膜層晶圓電阻1W 33.2ohm 1%採用薄膜技術設計，具有出色的抗浪湧能力，受益於MELF封裝，它的散熱性極佳。通過AEC-Q200認證，抗硫化。它是任何其他浪湧電阻器的最佳替代品。
| 尺寸 | 额定功率 | 精度(%) | 温度系数(PPM) | 阻值(Ω) | 包装方式 |
|---|---|---|---|---|---|
| 0207 | 1W | 1% | -- | 33.2 | 2K/Tape Reel |
产品特性
- AEC-Q200 Compliant
- Anti-sulfuration test qualified
- Heat dissipation is much better than chip resistor
- Stronger mechanical structure to endure vibration and thermal shock
- MELF packaging yet capable of high power handling
- Special conductive film enhances anti-surge capability
- Absorbs harmful surge which damages precious devices or components
- SMD-enabled alternative to carbon composition resistors
- Tested and certified according to DIN EN IEC 62368-1 (VDE 0868-1):2021-05 Anhang/Annex G.10; EN IEC 62368-1:2020+A11:2020 Anhang/Annex G.10 (except SRM204 type)
- Products meet RoHS requirements and do not contain substances of very high concern identified by European Chemicals Agency
产品应用
- 防雷保护
- 汽车
- 工业控制
- 测量/测试设备
- 电源
- 医疗设备
- 有线通讯
- 智能居家
单次浪涌性能
Surge Resistant MELF Resistor-SRM101T is showing the surge performance from 10uS to 1S.
浪涌功率降额曲线
• SINGLE SURGE PERFORMANCE graph is good for NON REPETITIVE applications operating in an ambient temperature of 70°C or less.
For temperatures above 70°C, the graph power must be derated further linearly down to zero at 150 °C.
• To determine applicable surge power in continuous-surge applications:
1. Identify allowable duration and peak power Psurge of single surge.
2. Determine ratio of surge duration/surge OFF time in application.
3. Calculate Papplicable backwardly according to Y-axis of SURGE POWER DERATING CURVE.
建议焊盘尺寸
Suggested pad layout for Surge Resistant MELF Resistor, SRM series
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